专利名称：Silicon deposition process
发明人：Israel A. Lesk,M. John Rice, Jr.,Kalluri R.
Sarma
申请号：US06/594456
申请日：19840329
公开号：US04590024A
公开日：
19860520
reactor pressure vessel专利内容由知识产权出版社提供
摘要：An improved process is disclosed for the deposition in a reactor vessel of silicon on the interior walls of the reactor vessel and for the subsequent separation of the silicon from those walls. The reactor vessel has a generally rectangular cross section and is formed of a refractory material from which the deposited silicon separates by thermal expansion shear separation during cool down of the vessel and the deposited silicon. To improve the output of the deposition system, a plurality of partitions are provided in the reactor vessel and integral with the reactor walls. These partitions act as additional deposition surfaces, increasing the number of silicon sheets deposited as well as increasing the efficiency of the chemical reaction.
申请人：SOLAVOLT INTERNATIONAL
代理人：John A. Fisher
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