专利名称：FORMING METHOD FOR HIGH MELTING POINT METAL ELECTRODE IN
SEMICONDUCTOR DEVICE
发明人：SUZUKI TOSHIYA,ITO JUNICHI
申请号：JP6150188
申请日：19880315
公开号：JPH01235238A
公开日：
19890920
专利内容由知识产权出版社提供
摘要：PURPOSE:To form a high melting point metal thin film containing very little amount of oxygen, and restrain the formation of silicide, by a method wherein, in the case of forming a high melting point metal electrode on a silicon substrate, a thin film of high melting point metal is formed in inert gas containing oxygen, as the pre-treatment. CONSTITUTION:When reactive live gas containing high melting point metal element is supplied on a silicon substrate 2 in an inert gas atmosphere, a high melting point metal thin film 3 vapor-grows on the silicon substrate 2 surface. In this process, oxygen contained in the inert gas mixes with the high melting point metal. Then a thick film 6 of high melting point metal is formed by CVD method in an inert gas atmosphere added with reducing gas. Since oxygen is contained in the high melting point metal thin film 5, silicon dioxide(SiO2) is formed by the reaction of oxygen in the high melting point metal thin film 5 with silicon, before bonding of silicon and the high melting point metal on the interface of the silicon substrate 2, in the case of heat treatment in the manufacturing process of a semiconductor device. Thereby the formation of local silicide is restrained.
申请人：FUJITSU LTD
reactive metal更多信息请下载全文后查看