专利名称：MANUFACTURE OF SEMICONDUCTOR DEVICE
发明人：NAKATANI MITSUNORI
申请号：JP31220190
申请日：19901116
公开号：JPH04186638A
公开日：
19920703xposed
专利内容由知识产权出版社提供
摘要：PURPOSE:To eliminate doing damage to a substrate surface by forming the dummy pattern of a two-step recess type gate while controlling an electron-beam exposure resist to positive and negative types through changing the dosage of the electron-beam exposure resist. CONSTITUTION:An active layer 2 is formed on a GaAs substrate 1, a source electrode 5 and drain electrode 6 are formed on the active layer and further EB resist 16 is applied to the whole surface of the GaAs substrate 1. After that, EB exposure, where EB resist 16 is made negative at the dosage of DNmuC/ cm<2>, is conducted in a gate-forming part and EB exposure, where the EB resist 16 is made positive at the dosage of DPmuC/cm<2>, is conducted in an upper step recess-forming part. At the time of developing by a developer, a part exposed at the dosage DP is developed, but a part exposed at the dosage DN is made negative to remain as EB resist 16c and the EB resist 16a, 16b of an unexposed part also remains as it is. Then, when the active layer 2 is etched by tartaric acid, etc., there is formed an upper step recess 10 composed of an upper gate source recess opening 8 and lower step gate drain recess opening 9.
申请人：MITSUBISHI ELECTRIC CORP
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