专利名称：Method for LPCVD co-deposition of metal and silicon to form metal silicide
发明人：William I. Lehrer
申请号：US06/282768
申请日：19810713
公开号：US04359490A
公开日：
19821116
专利内容由知识产权出版社提供
reactor then摘要：A low temperature LPCVD process for co-depositing metal and silicon to form metal silicide on a surface such as the surface of a semiconductor integrated circuit wherein the metal is selected from the group consisting of tungsten, molybdenum, tantalum and niobium. A reactor which contains the surface is maintained at a temperature of about 500°- 700° C. The reactor is purged by the successive steps of introducing an inert gas into the reactor, introducing a reducing atmosphere into the reactor and introducing hydrogen chloride gas into the reactor. Silane is then introduced into the reactor such that a base layer of polysilicon is formed on the surface. Then, while maintaining silane introduction to the reactor, metal chloride vapor is simultaneously introduced into the reactor such that metal and silicon are co-deposited on the polysilicon as metal silicide.
申请人：FAIRCHILD CAMERA & INSTRUMENT CORP.
代理人：Ken Olsen,Theodore Scott Park,Michael J. Pollock
更多信息请下载全文后查看